january 2014 ?2014 fairchild semiconductor corporation FDMD84100 rev.c www.fairchildsemi.com 1 FDMD84100 dual n-channel powertrench ? mosfet g1 d1 d1 d1 g2 d2 s1/s2 d2 d2 power 3.3 x 5 pin 1 g1 d1 d1 d1 s1,s2 to backside d2 d2 d2 g2 1 2 3 4 8 7 6 5 top bottom pin 1 FDMD84100 dual n-channel powertrench ? mosfet 100 v, 21 a, 20 m features ? max r ds(on) = 20 m at v gs = 10 v, i d = 7 a ? max r ds(on) = 32 m at v gs = 6 v, i d = 5.5 a ? ideal for flexible layout in secondary side synchronous rectification ? termination is lead-free and rohs compliant ? 100% uil tested general description this package integrates tw o n-channel devices connected internally in common-source configuration. this enables very low package parasitics and optimized thermal path to the common source pad on the bottom. provides a very small footprint (3.3 x 5 mm) for higher power density. applications ? isolated dc-dc synchronous rectifiers ? common ground load switches mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 100 v v gs gate to source voltage 20 v i d drain current -continuous t c = 25 c 21 a -continuous t a = 25 c (note 1a) 7 -pulsed (note 4) 80 e as single pulse avalanche energy (note 3) 121 mj p d power dissipation t c = 25 c 23 w power dissipation t a = 25 c (note 1a) 2.1 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 5.3 c/w r ja thermal resistance, junction to ambient (note 1a) 60 device marking device package reel size tape width quantity FDMD84100 FDMD84100 power 3.3 x 5 13 ?? 12 mm 3000 units
FDMD84100 dual n-channel powertrench ? mosfet www.fairchildsemi.com 2 ?2014 fairchild semiconductor corporation FDMD84100 rev.c electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 100 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 74 mv/c i dss zero gate voltage drain current v ds = 80 v, v gs = 0 v 1 a i gss gate to source leakage current v gs = 20 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a23.14v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -9 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 7 a 16 20 m v gs = 6 v, i d = 5.5 a 24 32 v gs = 10 v, i d = 7 a, t j = 125 c 30 38 g fs forward transconductance v dd = 5 v, i d = 7 a 17 s c iss input capacitance v ds = 50 v, v gs = 0 v f = 1 mhz 734 980 pf c oss output capacitance 168 225 pf c rss reverse transfer capacitance 6.6 15 pf r g gate resistance 0.1 1.3 3 t d(on) turn-on delay time v dd = 50 v, i d = 7 a v gs = 10 v, r gen = 6 8.4 17 ns t r rise time 2.6 10 ns t d(off) turn-off delay time 14 25 ns t f fall time 2.8 10 ns q g(tot) total gate charge v gs = 0 v to 10 v v dd = 50 v i d = 7 a 11 16 nc total gate charge v gs = 0 v to 6 v 7.3 11 nc q gs gate to source charge 3.4 nc q gd gate to drain ?miller? charge 2.5 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 7 a (note 2) 0.8 1.2 v t rr reverse recovery time i f = 7 a, di/dt = 100 a/ s 43 70 ns q rr reverse recovery charge 44 71 nc notes: 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0 %. 3. e as of 121 mj is based on starting t j = 25 o c, l = 3 mh, i as = 9 a, v dd = 100 v, v gs = 10 v. 100% tested at l = 0.1 mh, i as = 30 a. 4. pulse id refers to figure.11 forward bias safe operation area. a. 60 c/w when mounted on a 1 i n 2 pad of 2 oz copper b.160 c/w when mounted on a minimum pad of 2 oz copper g df ds sf ss g df ds sf ss
FDMD84100 dual n-channel powertrench ? mosfet www.fairchildsemi.com 3 ?2014 fairchild semiconductor corporation FDMD84100 rev.c typical characteristics t j = 25 c unless otherwise noted figure 1. 012345 0 20 40 60 80 v gs = 7 v v gs = 6 v v gs = 8 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 5 v v gs = 10 v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 0 20406080 0 1 2 3 4 v gs = 8 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 7 v v gs = 6 v v gs = 10 v v gs = 5 v n o r m a l i z e d o n - r e s i s t a n c e v s d r a i n c u r r e n t a n d g a t e v o l t a g e f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 i d = 7 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 45678910 0 20 40 60 80 100 t j = 125 o c i d = 7 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max on-resistance vs gate to source voltage figure 5. transfer characteristics 24681 0 0 20 40 60 80 t j = 150 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMD84100 dual n-channel powertrench ? mosfet www.fairchildsemi.com 4 ?2014 fairchild semiconductor corporation FDMD84100 rev.c figure 7. 024681012 0 2 4 6 8 10 i d = 7 a v dd = 75 v v dd = 50 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 25 v gate charge characteristics figure 8. 0.1 1 10 100 1 10 100 1000 2000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.001 0.01 0.1 1 10 50 1 10 50 t j = 125 o c t j = 25 o c t j = 100 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 5 10 15 20 25 v gs = 6 v limited by package r t jc = 5.3 o c/w v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature figure 11. forward bias safe 0.1 1 10 100 300 0.1 1 10 100 200 10 s 10 ms dc 1 ms 100 s i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t jc = 5.3 o c/w t c = 25 o c curve bent to measured data operating area f i g u r e 1 2 . s i n g l e p u l s e m a x i m u m 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 10000 single pulse r t jc = 5.3 o c/w t c = 25 o c p ( pk ) , peak transient power (w) t, pulse width (sec) power dissipation typical characteristics t j = 25 c unless otherwise noted
FDMD84100 dual n-channel powertrench ? mosfet www.fairchildsemi.com 5 ?2014 fairchild semiconductor corporation FDMD84100 rev.c figure 13. junction-to-case transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.001 0.01 0.1 1 2 single pulse duty cycle-descending order r(t), normalized effective transient thermal resistance t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: z t jc (t) = r(t) x r t jc r t jc = 5.3 o c/w duty cycle, d = t 1 / t 2 peak t j = p dm x z t jc (t) + t c typical characteristics t j = 25 c unless otherwise noted
FDMD84100 dual n-channel powertrench ? mosfet www.fairchildsemi.com 6 ?2014 fairchild semiconductor corporation FDMD84100 rev.c dimensional outline and pad layout land pattern recommendation 2x b a 2x top view front view bottom view c keep out area detail a sc al e: 2x see detail a
www.fairchildsemi.com FDMD84100 dual n-channel powertrench ? mosfet ?2014 fairchild semiconductor corporation FDMD84100 rev.c 7 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life su pport device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? ax-cap ? * bitsic? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? fps? f-pfs? frfet ? global power resource sm greenbridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? mwsaver ? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* tinyboost ? tinybuck ? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic? trifault detect? truecurrent ? * serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specificati ons for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time withou t notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in t he industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experi ence many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing del ays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any wa rranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i66 tm ?
|
